Efnisyfirlit

• Title Page
• Copyright
• Contents
• Preface
  • What's New in the Third Edition
  • Topical Coverage
  • Key Features
  • Textbook Supplements
• Acknowledgments
• Chapter 0: Introduction
  • 0.1: Semiconductor Devices
    • 0.1.1: Device Building Blocks
    • 0.1.2: Major Semiconductor Devices
  • 0.2: Semiconductor Technology
    • 0.2.1: Key Semiconductor Technologies
    • 0.2.2: Technology Trends
  • Summary
• Part I: Semiconductor Physics
  • Chapter 1: Energy Bands and Carrier Concentration in Thermal Equilibrium
    • 1.1: Semiconductor Materials
      • 1.1.1: Element Semiconductors
      • 1.1.2: Compound Semiconductors
    • 1.2: Basic Crystal Structures
      • 1.2.1: Unit Cell
      • 1.2.2: The Diamond Structure
      • 1.2.3: Crystal Planes and Miller Indices
    • 1.3: Valence Bonds
    • 1.4: Energy Bands
      • 1.4.1: Energy Levels of Isolated Atoms
      • 1.4.2: The Energy-Momentum Diagram
      • 1.4.3: Conduction in Metals, Semiconductors, and Insulators
    • 1.5: Intrinsic Carrier Concentration
    • 1.6: Donors and Acceptors
      • 1.6.1: Nondegenerate Semiconductor
      • 1.6.2: Degenerate Semiconductor
    • Summary
  • Chapter 2: Carrier Transport Phenomena
    • 2.1: Carrier Drift
      • 2.1.1: Mobility
      • 2.1.2: Resistivity
      • 2.1.3: The Hall Effect
    • 2.2: Carrier Diffusion
      • 2.2.1: Diffusion Process
      • 2.2.2: Einstein Relation
      • 2.2.3: Current Density Equations
    • 2.3: Generation and Recombination Processes
      • 2.3.1: Direct Recombination
      • 2.3.2: Quasi-Fermi Level
      • 2.3.3: Indirect Recombination
      • 2.3.4: Surface Recombination
    • 2.4: Continuity Equation
      • 2.4.1: Steady-State Injection from One Side
      • 2.4.2: Minority Carriers at the Surface
      • 2.4.3: The Haynes-Shockley Experiment
    • 2.5: Thermionic Emission Process
    • 2.6: Tunneling Process
    • 2.7: Space-Charge Effect
    • 2.8: High-Field Effects
    • Summary
• Part II: Semiconductor Devices
  • Chapter 3: p-n Junction
    • 3.1: Thermal Equilibrium Condition
      • 3.1.1: Band Diagram
      • 3.1.2: Equilibrium Fermi Levels
      • 3.1.3: Space Charge
    • 3.2: Depletion Region
      • 3.2.1: Abrupt Junction
      • 3.2.2: Linearly Graded Junction
    • 3.3: Depletion Capacitance
      • 3.3.1: Capacitance-Voltage Characteristics
      • 3.3.2: Evaluation of Impurity Distribution
      • 3.3.3: Varactor
    • 3.4: Current-Voltage Characteristics
      • 3.4.1: Ideal Characteristics
      • 3.4.2: Generation-Recombination and High-Injection Effects
      • 3.4.3: Temperature Effect
    • 3.5: Charge Storage and Transient Behavior
      • 3.5.1: Minority-Carrier Storage
      • 3.5.2: Diffusion Capacitance
      • 3.5.3: Transient Behavior
    • 3.6: Junction Breakdown
      • 3.6.1: Tunneling Effect
      • 3.6.2: Avalanche Multiplication
    • 3.7: Heterojunction
    • Summary
  • Chapter 4: Bipolar Transistors and Related Devices
    • 4.1: Transistor Action
      • 4.1.1: Operation in the Active Mode
      • 4.1.2: Current Gain
    • 4.2: Static Characteristics of Bipolar Transistors
      • 4.2.1: Carrier Distribution in Each Region
      • 4.2.2: Ideal Transistor Currents for Active Mode Operation
      • 4.2.3: Modes of Operation
      • 4.2.4: Current-Voltage Characteristics of Common-Base and Common-Emitter Configurations
    • 4.3: Frequency Response and Switching of Bipolar Transistors
      • 4.3.1: Frequency Response
      • 4.3.2: Switching Transients
    • 4.4: Nonideal Effects
      • 4.4.1: Emitter Bandgap Narrowing
      • 4.4.2: Graded-Base Region
      • 4.4.3: Current Crowding
      • 4.4.4: Generation-Recombination Current and High-Current Effect
    • 4.5: Heterojunction Bipolar Transistors
      • 4.5.1: Current Gain in HBT
      • 4.5.2: Basic HBT Structures
      • 4.5.3: Advanced HBTs
    • 4.6: Thyristors and Related Power Devices
      • 4.6.1: Basic Characteristics
      • 4.6.2: Bidirectional Thyristor
    • Summary
  • Chapter 5: MOS Capacitor and MOSFET
    • 5.1: Ideal MOS Capacitor
    • 5.2: SiO2-Si MOS Capacitor
    • 5.3: Carrier Transport in MOS Capacitors
      • 5.3.1: Basic Conduction Processes in Insulators
      • 5.3.2: Dielectric Breakdown
    • 5.4: Charge-Coupled Devices (CCD)
    • 5.5: MOSFET Fundamentals
      • 5.5.1: Basic Characteristics
      • 5.5.2: Types of MOSFET
      • 5.5.3: Threshold Voltage Control
    • Summary
  • Chapter 6: Advanced MOSFET and Related Devices
    • 6.1: MOSFET Scaling
      • 6.1.1: Short-Channel Effects
      • 6.1.2: Scaling Rules
      • 6.1.3: MOSFET Structures to Control Short-Channel Effects
    • 6.2: CMOS and BiCMOS
      • 6.2.1: The CMOS Inverter
      • 6.2.2: Latch-up
      • 6.2.3: CMOS Image Sensor
      • 6.2.4: BiCMOS
    • 6.3: MOSFET on Insulator
      • 6.3.1: Thin Film Transistor (TFT)
      • 6.3.2: Silicon-on-Insulator (SOI) Devices
      • 6.3.3: Three-Dimensional Structures
    • 6.4: MOS Memory Structures
      • 6.4.1: DRAM
      • 6.4.2: SRAM
      • 6.4.3: Nonvolatile Memory
    • 6.5: Power MOSFET
    • Summary
  • Chapter 7: MESFET and Related Devices
    • 7.1: Metal-Semiconductor Contacts
      • 7.1.1: Basic Characteristics
      • 7.1.2: The Schottky Barrier
      • 7.1.3: The Ohmic Contact
    • 7.2: MESFET
      • 7.2.1: Basic Device Structures
      • 7.2.2: Principles of Operation
      • 7.2.3: Current-Voltage Characteristics
      • 7.2.4: High-Frequency Performance
    • 7.3: MODFET
      • 7.3.1: MODFET Fundamentals
      • 7.3.2: Current-Voltage Characteristics
      • 7.3.3: Cutoff Frequency
    • Summary
  • Chapter 8: Microwave Diodes; Quantum-Effect and Hot-Electron Devices
    • 8.1: Microwave Frequency Bands
    • 8.2: Tunnel Diode
    • 8.3: IMPATT Diode
      • 8.3.1: Static Characteristics
      • 8.3.2: Dynamic Characteristics
    • 8.4: Transferred-Electron Devices
      • 8.4.1: Negative Differential Resistance
      • 8.4.2: Device Performances
    • 8.5: Quantum-Effect Devices
      • 8.5.1: Resonant Tunneling Diode
      • 8.5.2: Unipolar Resonant Tunneling Transistor
    • 8.6: Hot-Electron Devices
      • 8.6.1: Hot-Electron HBT
      • 8.6.2: Real-Space–Transfer Transistor
    • Summary
  • Chapter 9: Light Emitting Diodes and Lasers
    • 9.1: Radiative Transitions and Optical Absorption
      • 9.1.1: Radiative Transitions
      • 9.1.2: Optical Absorption
    • 9.2: Light-Emitting Diodes
      • 9.2.1: Structure of LED
      • 9.2.2: Optical characteristics of the LED
      • 9.2.3: Quantum Efficiency
    • 9.3: Various Light-Emitting Diodes
      • 9.3.1: Visible LEDs
      • 9.3.2: Organic LED
      • 9.3.3: White-Light LED
      • 9.3.4: Infrared LED
    • 9.4: Semiconductor Lasers
      • 9.4.1: Semiconductor Materials
      • 9.4.2: Laser Operation
      • 9.4.3: Basic Laser Structure
      • 9.4.4: Distributed Feedback Lasers
      • 9.4.5: Quantum-Well Lasers
      • 9.4.6: Separate-Confinement Heterostructure MQW laser
      • 9.4.7: Quantum-Wire and Quantum-Dot lasers
      • 9.4.8: Vertical-Cavity Surface-Emitting Laser (VCSEL)
      • 9.4.9: Quantum-Cascade Laser
    • Summary
  • Chapter 10: Photodetectors and Solar Cells
    • 10.1: Photodetectors
      • 10.1.1: Photoconductor
      • 10.1.2: Photodiode
      • 10.1.3: p-i-n Photodiode
      • 10.1.4: Metal-Semiconductor Photodiode
      • 10.1.5: Avalanche Photodiode
      • 10.1.6: Phototransistor
      • 10.1.7: Heterojunction Photodiode
      • 10.1.8: Superlattice APD
      • 10.1.9: Quantum-Well Infrared Photodetector
    • 10.2: Solar Cells
      • 10.2.1: Solar Radiation
      • 10.2.2: p-n Junction Solar Cell
      • 10.2.3: Conversion Efficiency
    • 10.3: Silicon and Compound-Semiconductor Solar Cells
      • 10.3.1: Wafer-Based Solar Cells
      • 10.3.2: Thin-Film Solar Cells
    • 10.4: Third-Generation Solar Cells
    • 10.5: Optical Concentration
    • Summary
• Part III: Semiconductor Technology
  • Chapter 11: Crystal Growth and Epitaxy
    • 11.1: Silicon Crystal Growth from the Melt
      • 11.1.1: Starting Material
      • 11.1.2: The Czochralski Technique
      • 11.1.3: Distribution of Dopant
      • 11.1.4: Effective Segregation Coefficient
    • 11.2: Silicon Float-Zone Proces
    • 11.3: GaAs Crystal-Growth Techniques
      • 11.3.1: Starting Materials
      • 11.3.2: Crystal-Growth Techniques
    • 11.4: Material Characterization
      • 11.4.1: Wafer Shaping
      • 11.4.2: Crystal Characterization
    • 11.5: Epitaxial-Growth Techniques
      • 11.5.1: Chemical-Vapor Deposition
      • 11.5.2: Molecular-Beam Epitaxy
    • 11.6: Structures and Defects in Epitaxial Layers
      • 11.6.1: Lattice-Matched and Strained-Layer Epitaxy
      • 11.6.2: Compound Semiconductors on Silicon
    • Summary
  • Chapter 12: Film Formation
    • 12.1: Thermal Oxidation
      • 12.1.1: Kinetics of Growth
      • 12.1.2: Thin Oxide Growth
    • 12.2: Chemical Vapor Deposition of Dielectrics
      • 12.2.1: Chemical Vapor Deposition
      • 12.2.2: Silicon Dioxide
      • 12.2.3: Silicon Nitride
      • 12.2.4: Low-Dielectric-Constant Materials
      • 12.2.5: High-Dielectric–Constant Materials
    • 12.3: Chemical Vapor Deposition of Polysilicon
    • 12.4: Atom Layer Deposition
    • 12.5: Metallization
      • 12.5.1: Physical-Vapor Deposition
      • 12.5.2: CVD Metal Deposition
      • 12.5.3: Aluminum Metallization
      • 12.5.4: Copper Metallization
      • 12.5.5: Chemical-Mechanical Polishing
      • 12.5.6: Silicide
    • Summary
  • Chapter 13: Lithography and Etching
    • 13.1: Optical Lithography
      • 13.1.1: The Clean Room
      • 13.1.2: Exposure Equipment
      • 13.1.3: Masks
      • 13.1.4: Photoresist
      • 13.1.5: Pattern Transfer
      • 13.1.6: Resolution Enhancement Techniques
    • 13.2: Next-Generation Lithographic Methods
      • 13.2.1: Electron-Beam Lithography
      • 13.2.2: Extreme-Ultraviolet Lithography
      • 13.2.3: Ion-Beam Lithography
      • 13.2.4: Comparison of Various Lithographic Methods
    • 13.3: Wet Chemical Etching
      • 13.3.1: Silicon Etching
      • 13.3.2: Silicon Dioxide Etching
      • 13.3.3: Silicon Nitride and Polysilicon Etching
      • 13.3.4: Aluminum Etching
      • 13.3.5: Gallium Arsenide Etching
    • 13.4: Dry Etching
      • 13.4.1: Plasma Fundamentals
      • 13.4.2: Surface Chemistry
      • 13.4.3: Capacitively Coupled Plasmas Etchers
      • 13.4.4: Inductively Coupled Plasma Etchers
      • 13.4.5: Plasma Diagnostics and End-Point Control
      • 13.4.6: Etching Chemistries and Applications
    • Summary
  • Chapter 14: Impurity Doping
    • 14.1: Basic Diffusion Process
      • 14.1.1: Diffusion Equation
      • 14.1.2: Diffusion Profiles
      • 14.1.3: Evaluation of Diffused Layers
    • 14.2: Extrinsic Diffusion
      • 14.2.1: Concentration-Dependent Diffusivity
      • 14.2.2: Diffusion Profiles
    • 14.3: Diffusion-Related Processes
      • 14.3.1: Lateral Diffusion
      • 14.3.2: Impurity Redistribution During Oxidation
    • 14.4: Range of Implanted Ions
      • 14.4.1: Ion Distribution
      • 14.4.2: Ion Stopping
      • 14.4.3: Ion Channeling
    • 14.5: Implant Damage and Annealing
      • 14.5.1: Implant Damage
      • 14.5.2: Annealing
    • 14.6: Implantation-Related Processes
      • 14.6.1: Multiple Implantation and Masking
      • 14.6.2: Tilt-Angle Ion Implantation
      • 14.6.3: High-Energy and High-current Implantation
    • Summary
  • Chapter 15: Integrated Devices
    • 15.1: Passive Components
      • 15.1.1: The Integrated-Circuit Resistor
      • 15.1.2: The Integrated-Circuit Capacitor
      • 15.1.3: The Integrated-Circuit Inductor
    • 15.2: Bipolar Technology
      • 15.2.1: The Basic Fabrication Process
      • 15.2.2: Dielectric Isolation
      • 15.2.3: Self-Aligned Double-Polysilicon Bipolar Structure
    • 15.3: MOSFET Technology
      • 15.3.1: The Basic Fabrication Process
      • 15.3.2: CMOS Technology
      • 15.3.3: BiCMOS Technology
      • 15.3.4: FinFET Technology
      • 15.3.5: Memory Devices
    • 15.4: MESFET Technology
    • 15.5: Challenges for Nanoelectronics
      • 15.5.1: Challenges for Integration
      • 15.5.2: System-on-a-Chip
    • Summary
• Appendix A: List of Symbols
• Appendix B: International Systems of Units (SI Units)
• Appendix C: Unit Prefixes
• Appendix D: Greek Alphabet
• Appendix E: Physical Constants
• Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K
• Appendix G: Properties of Si and GaAs at 300 K
• Appendix H: Derivation of the Density of States in a Semiconductor
• Appendix I: Derivation of Recombination Rate for Indirect Recombination
• Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode
• Appendix K: Basic Kinetic Theory of Gases
• Appendix L: Answers to Selected Problems
• Photo credits
• Index
• EULA

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